We have investigated the BER performance of TC 8PSK with 2 branch SC and MRC diversities on spatially correlated Rayleigh fading channel. The upper bounds using the transfer function bounding technique are derived several numerical results are shown. Although the correlation between branches causes signal-to-noise (SNR) loss (relative to uncorrelated fading case) for SC and MRC diversities, the diversity can lead to achieve the diversity gain compared to the system without diversity. It is found that the diversity gain of 4-state TC 8PSK is larger than 8-state TC 8PSK. It is also shown that the BER performance of TC 8PSK is decreased as the antenna separation is decreased.

To evaluate the coding performance of a multilevel coding scheme for Rayleigh fading channel, a virtual automatic gain control and interleaving are applied to the scheme. The automatic gain control is assumed only for the theoretical evaluation of the performance. It is noted that the bit error-rate performance of the scheme for phase shift keying does not change whether the control is assumed or not. By the effect of the virtual automatic gain control and the interleaving, a fading channel with Gaussian noise is theoretically converted into an equivalent time-invariant channel with non-Gaussian noise. The probability density function of the converted non-Gaussian noise is derived. Then, the function is applied to a formula of the bit error-rate of the scheme for non-Gaussian noise. The formula is derived for phase shift keying by modifying that for pulse amplitude modulation. The coding performance for the non-Gaussian noise channel is evaluated by the formula, and the suitable coding with ideal interleaving is searched. As a result, the coding gain of 28 dB is obtained at the bit error-rate of 10-6 by using BCH code of length 31. This result is confirmed by a simulation for the fading channel. Then, the effectiveness of the formula for finite interleaving is evaluated. Finally, the usefulness of the formula, where the noise power is doubled, is shown for a case of a differential detection.

A refection type and loaded-line type phase shifter switching multi phase-states has been described. This novel phase shifter circuit is constructed by adding switching FETs to a conventional 2-phase-state phase shifter. A conventional 3 bit phase shifter can be replaced by this type of phase shifter. The total chip size is reduced to 2/3. This paper reports on the design, fabrication, and performance of the novel reflection-type and loaded-line-type phase shifter MMICs.

An optoelectronic technique to control both the amplitude and phase of a radio frequency (RF) signal is presented that uses two electrically controllable birefringence mode nematic liquid-crystal spatial light modulators (ECB mode nematic LC-SLMs). An experimental circuit was built and its performance was examined. The intensity could be changed down to -25 dB, and a phase shift of up to 240 degrees was achieved, by changing LC-SLM supplied voltages. Carrier-to-noise ratio (CNR) and intermodulation characteristics of an RF signal were measured. It was, for the first time, found that CNR was not degraded by the amplitude control and phase shift performed by the LC-SLMs.

A key element in the CDMA transmission is DS spreading. Spreading in a DS/SSMA system are provided in two categories-synchronization and data. For synchronization sequences, good auto-correlation and cross-correlation properties are required in order to guarantee fast acquistion with a minimum false alarm probability. On the other hand, the auto-correlation property may not be so important in data spreading since synchronization is obtained by synchronization spreading. In this paper we provide a set of synchronization sequences and a set of data sequences--each a set of binary N-tuples--that have the necessary correlation constraints.

A new phase shift lithography method has been developed that allows different integrated circuit features to be focused on different optical planes that conform to the wafer surface topography. In principle, each pattern in the circuit has its own unique focal plane. The direction and magnitude of each focus shift is determined by the design of the shifter patterns. This method is applicable for use with conventional opaque mask patterns and unattenuated phase shift patterns. The characteristics of this multiple-focus-plane technique have been evaluated experimentally and confirmed theoretically through mathematical modeling using TCC optical imaging theory. Experiments were conducted using i-line positive resist processes for different phase-shift patterns. This paper discusses the effects of changes in phase shift and recommends practical mask design approaches.

A strictly nonblocking 88 matrix switch was designed and fabricated using silica-based planar lightwave circuits (PLC) on a silicon substrate. The average insertion loss was 11 dB in the TE mode and 11.3 dB in the TM mode. The average switch element extinction ratio was 16.7 dB in the TE mode and 17.7 dB in the TM mode. The accumulated crosstalk was estimated to be 7.4 dB in the TE mode and 7.6 dB in the TM mode. The driving power of the phase shifter required for switching was about 0.5 W and the polarization dependence of the switching power was 4%. The switching response time was 1.3 msec. The wavelength range with a switch extinction ratio of over 15 dB was 1.31 µm30 nm.

This paper discusses the development of a monolithic image-rejection mixer with very wide-band (about 60% of the center frequency) image rejection characteristics for 16-QAM digital microwave radio communication receivers. The mixer can be commonly used in 4-, 5-, and 6-GHz bands, which reduces the cost. The mixer consists of a wide-band 90splitter, in-phase divider and drain LO injection mixers. They are designed on a single 2.81.8 mm2 GaAs chip based on a uniplanar MMIC lumped-constant element technique. The mixer achieved an image rejection ratio of greater than 25 dB and a conversion loss of less than 2 dB at a wide LO frequency range from 3.5 to 6.5 GHz, without consuming any DC power.

This paper presents the successful performance of an optical waveguide phase controller for microwave signals generated by heterodyne photodetection. A 22 optical waveguide structure with four optical phase shifters was fabricated on a LiNbO3 substrate. As a result of heterodyne photodetection of two optical signals from wavelength-tunable laser diodes, two microwave signals at 585 MHz were generated and phase shifted in the manner of electro-optical phase retardation. The monolithic waveguide structure allowed linear phase shifting more than 1800 degrees. Similar phase shifting performances were also confirmed over a wide microwave frequency range from 300 MHz to 1.3 GHz. The optical waveguide structure demonstrated here will be applicable to fiber-optic fed microwave systems such as a phased array antenna.

Fabrication of 0.2 to 0.3 µm features is vital for future ultralarge scale integration devices. An area of particular concern is whether optical lithography can delineate such feature sizes, i.e., less than the exposure wavelength. The use of a phase shift mask is one of the most effective means of improving resolution in optical lithography. This technology basically makes use of the interference between light transmitting through adjacent apertures of the mask. Various types of phase shift masks and their imaging characteristics are discussed and compared with conventional normal transmission masks. To apply these masks effectively to practical patterns, a phase shifter pattern design tool and mask repair method must be established. The phase shifting technology offers a potential to fabricate 0.3 µm features by using the current i-line stepper, and 0.2 µm features by using excimer laser stepper.

An extremely accurate and very wide-band quadrature modulator IC fabricated on a single chip using bipolar technology is presented. The characteristics of this quadrature modulator IC are much superior to conventional ones (modulation phase error and deviation from quadrature is about 1/10), and this IC is applicable to high modulation schemes such as 256 QAM. In this circuit, the phase difference between local signals input to each of two balanced modulators is detected by a phase detector, and a variable phase shifter in the local port is controlled automatically by the detected signals. This, along with the use of a wide-band variable phase shifter, enables the phase difference between the local signals input to the balanced modulators to be adaptively controlled to 90 degrees in wide frequency bands. In addition, a design method for the balanced modulators to obtain small modulation phase error is described. Based on this design method, a highly accurate quadrature modulator IC was fabricated, in which two balanced modulators, the phase detector, and the variable phase shifter were integrated on a single chip. Phase deviation from quadrature in the local signals was reduced to less than 0.3 degrees in the wide frequency bands of more tham 60 MHz. The modulation phase error of the balanced modulators wes less than 0.2 degrees at 140 MHz, and less than 2.5 degrees at up to 1.3 GHz.

Low-field mobilities and velocity versus electric field relations are among the key input parameters for drift-diffusion simulations of field-effect and bipolar transistors. For example, most device simulations that treat scattering from ionized impurities contain mobilities or velocity versus field relations based on the Born approximation (BA). The BA is insensitive to the sign of the charged impurity and is especially poor for ionized impurity scattering because of the relatively strong scattering of long-wavelength carriers, which have low energies, and therefore violate the validity condition for the BA. Such carriers occur at high symmetry points in the Brillouin zone and are critical for device behavior. There has been a tendency in the past to assume that majority and minority mobilities are equal. This assumption can lead to incorrect interpretations of device data and thereby misleading design strategies based on such simulations. We have calculated the majority electron and minority hole mobilities in GaAs at 300 K for donor densities between 51016 and 11019 cm-3 and the majority hole and minority electron mobilities for acceptor densities between 51016 and 11020 cm-3. We have included all the important scattering mechanisms for GaAs: acoustic phonon, polar optic phonon, nonpolar optic phonon (holes only), piezoelectric, ionized impurity, carrier-carrier, and plasmon scattering. The ionized impurity and carrier-carrier scattering processes have been calculated with a quantum mechanical phase-shift analysis to obtain more accurate matrix elements for these two scattering mechanisms. We compare the total scattering rate for majority electrons due to ionized impurities based on exact phase shifts and on the BA used by Brooks-Herring. We also present additional data that show the differences between the exact phase-shift analyses and the BA for majority electron scattering rates as functions of carrier energy and scattering angle. These results show that the calculated low-field mobilities are in good agreement with experiment, but they predict that at high dopant densities minority mobilities should increase with increasing dopant density for a short range of densities. This effect occurs because of the reduction of plasmon scattering and the removal of carriers from carrier-carrier scattering because of the Pauli exclusion principle. Some recent experiments support this finding. These results are important for device modeling because of the need to have reliable values for the minority mobilities and velocity-field relations.